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Products

Product parameters

 

 


 

Catalog

Nd:YAG.. 2

Er:YAG.. 4

LBO.. 5

Yb:YAG.. 7

Ti:Sapphire. 8

Cr:YAG.. 9

DKDP Pockels cell 10

BBO Pockels cell 12

High Efficiency DKDP Pockels Cells. 14

LN Pockels Cells. 15

light-guide plate/Ruby. 17

 

 

 

 

 

 


 

Nd:YAG

 

 

 

Specifications of Nd:YAG crystal from SIOM

 

Dimension

size up to Φ15x160mm and maximum diameter of Φ40mmx2mm

Nd Dopant Level

0.1~1.2(±0.1)atm%

Length tolerance

±0.5mm

Perpendicularity

< 5 arc minutes

Parallelism

<10 arc seconds

Wavefront distortion

λ/8

Flatness

λ/10

Scratch/Dig

10/5 @MIL-PRF-13830B

Chamfer

0.1mmx45°

HR-Coating

R>99.8%@1064nm and R<5%@808nm

AR-Coating (Single layer MgF2)

R<0.25% per surface @1064nm

Other HR coatings

such as HR @1064/532 nm, HR @946nm, HR@1319 nm and other wavelengths are also available

Damage Threshold

>500MW/cm2

 

Optical Parameter of Nd:YAG crystal

 

Diameter (mm)

Standard grade

Excellence grade

Super excellence grade

Φ3-6.35

≤ λ/10

≤ λ/10

≤ λ/10

≥ 25dB

≥ 28dB

≥ 30dB

Φ7-10

≤ λ/10

≤ λ/10

≤ λ/10

≥ 22dB

≥ 25dB

≥ 28dB

Φ11-13

≤ λ/10

≤ λ/10

≤ λ/10

≥ 20dB

≥ 23dB

≥ 26dB

Φ14-16

≤ λ/10

≤ λ/10h

≤ λ/10

≥ 18dB

≥ 20dB

≥ 23dB

 


 

Er:YAG

 

Material and Specifications

 

Dopant concentration

Er: 10~50 at%

Wavefront Distortion

≤ λ/10 (@1064nm)

Extinction Ratio

≥25 dB

Rod Sizes

Diameter:36mm, Length:50120 mm 

Upon request of customer

Dimensional Tolerances

Diameter:+0.000"/-0.002", Length: ± 0.02"

Barrel Finish

Ground Finish: 400# Grit

Parallelism

≤10"

Perpendicularity

≤5′

Flatness

λ/10

Surface Quality

10/5(MIL-PRF-13830B)

Chamfer

0.006"±0.002" at 45°± 5°

AR Coating Reflectivity

≤ 0.25% (@2940nm)

LBO

 

 

 

SIOM offers LBO of

•   strict quality control;

•   large crystal size up to 30x30x30mm3 and maximum length of 60mm;

•   AR-coating, mounts and re-polishing services;

•   a large quantity of crystals in stock;

•   fast delivery(10 days for polished only, 15 days for AR-coated).

 

 

 

SIOM provides LBO crystal with the following AR-coatings:

•   Dual Band AR-coating (DBAR) of LBO for SHG of 1064nm.

•   low reflectance (R<0.2% at 1064nm and R<0.5% at 532nm );

•   high damage threshold (>500MW/cm2at both wavelengths);

•   long durability.

•   Broad Band AR-coating (BBAR) of LBO for SHG of tunable lasers.

•   Other coatings are available upon request.


 

LBO Specifications

 

Dimension tolerance

(W±0.1mm)x(H±0.1mm)x(L+0.5/-0.1mm) (L≥2.5mm)

(W±0.1mm)x(H±0.1mm)x(L+0.1/-0.1mm) (L<2.5mm)

Clear aperture

central 90% of the diameter

Flatness

less than λ/8 @ 633nm

Transmitting wavefront distortion

less than λ/8 @ 633nm

Chamfer

≤0.2mmx45°

Chip

≤0.1mm

Scratch/Dig code

better than 10/ 5 to MIL-PRF-13830B

Parallelism

better than 20 arc seconds

Perpendicularity

≤5 arc minutes

Angle tolerance

Δθ≤0.25°, ΔΦ≤0.25°

Damage threshold[GW/cm2 ]

>10 for 1064nm, TEM00, 10ns, 10HZ (polished only)

>1 for 1064nm, TEM00, 10ns, 10HZ (AR-coated)

>0.5 for 532nm, TEM00, 10ns, 10HZ (AR-coated)

 

 

 

 

NOTES
1. LBO has a very low susceptibility to moisture. Users are advised to provide dry conditions for both the use  and preservation of LBO.

2. Polished surfaces of LBO requires precautions to prevent any damage.

3. SIOM engineers can select and design the best LBO crystal for you, if the main parameters of your laser are provided, such as energy per pulse, pulse width and repetition rate for a pulsed laser, power for a cw laser, laser beam diameter, mode condition, divergence, wavelength tuning range, etc.

4. For thin LBO crystal, SIOM can provide free holder for you.


 

Yb:YAG

 

Advantages of Yb:YAG Crystal

•   Very low fractional heating, less than 11%

•   Very high slope efficiency

•   Broad absorption bands, about 8nm@940nm

•   No excited-state absorption or up-conversion

•   Conveniently pumped by reliable InGaAs diodes at 940nm(or 970nm)

•   High thermal conductivity and large mechanical strength

•   High optical quality

 

Material and Specifications

Dopant concentration

Yb: 530at%

Wavefront Distortion

λ/10

Extinction Ratio

≥28dB

Rod Sizes

Diameter: 220mm, Length: 5150mm

Upon request of customer

Dimensional Tolerances

Diameter: +0.00″/-0.002″mm,

Lenggth: ±0.02″

Barrel Finish

Ground Finish: 400#Grit

Parallelism

≤10″

Perpendicularity

≤5′

Flatness

λ/10

Surface Quality

10-5(MIL-PRF-13830B)

Chamfer

0.006″±0.002″at 45°±5°

AR Coating Reflectivity

≤0.25%@1030nm

Single pass loss

3 X 10-3cm-1


Ti:Sapphire

Main Applications

•   The tunable wavelengths that cover a broad range from 700 to 1000 nm make Ti:Sapphire  an  excellent substitute for dye lasers in many applications.

•   Doubling by NLO crystals such as BBO in an ultra-thin, Ti:Sapphire can be used to generate UV and

DUV (up to 193 nm ) laser with ultrafast pulses below 10fs.

•   Ti:Sapphire is also widely used as the pumping source of OPOs greatly to expand the  tunable   range.

Standard product specifications

Orientation

Optical axis C normal to rod axis

Ti2O3 concentration

0.06 - 0.26atm %

Figure Of Merit(FOM)

100~300(>250 available on special requests)

α490

1.0-4.0cm-1

Diameter

2-30mm or specified

Path Length

2-30mm or specified

End configurations

Flat/Flat or Brewster/Brewster ends

Flatness

<λ/10 @ 633 nm

Parallelism

<10 arc sec

Surface finishing

<40/20scratch/dig to MIL-PRF-13830B

Wavefront distortion

<λ/4 per inch

Cr:YAG

 

 

Basic Properties of  Cr4+:YAG

 

initial transmission

10%92%

Dopant Level

0.5mol% 3mol%

Hardness

8.5

Damage Threshold

500MW/cm2

Refractive Index

1.82@1064

 

The preliminary experiments of SIOM’s Cr4+:YAG showed that the pulse width of passively Q-switched lasers could be as short as 5ns for diode pumped Nd:YAG lasers and repetition as high as 10kHz for diode pumped Nd:YVO4 lasers. Furthermore, an efficient green output @532nm, and UV output @355nm and 266nm were generated, after a subsequent intracavity SHG in KTP or LBO, THG and 4HG in LBO and BBO for diode pumped and passive Q-switched Nd:YAG and Nd:YVO4 lasers.

Cr4+:YAG is also a laser crystal with tunable output from 1.35 µm to 1.55 µm. It can generate ultrashort pulse laser (to fs pulsed) when pumped by Nd:YAG laser at 1.064 µm.

 

 

 

Note:

When ordering Cr4+:YAG crystal, please specify the size, initial transmission and coatings. For further information, please contact SIOM.

 

 

DKDP Pockels cell

 

 

 

 

 

The advantage of the photoelectric electro-optic crystal Q switch

AR-Coating,Mounting Re-polishing Service

Strict Quality Control

Competitive Price

Fast Delivery

Superb Technical Support Always


 

DKDP Q-Switch Standard Specifications

Deuteration Level

98%

Quarter-Wave Voltage

3.6KV @1064nm

Optical Damage Threshold

4GW/cm2 at 10Hz

Extinction Ratio

1000:1

Capacitance

710pf @ 1kHz

Parallelism

20 arc seconds

Perpendicularity

5 arc minutes

Angle tolerance (degree)

Δθ±0.3°ΔФ±0.3mm

Windows AR coating

R0.1% at 1064nm

Dimension tolerance

±0.1mm

Flatness

λ/8 @ 633nm

Clear aperture

90% central area

 

 

 

Clear aperture

Ф8mm(face lead)

Ф8mm(side lead)

Ф10mm(face lead)

Ф10mm(side lead)

Ф12mm(face lead)

Ф12mm(side lead)

Outer Diameter

Ф20 X 29mm

Ф20 X 25mm

Ф30 X 20mm

Ф28 X 33mm

Ф30 X 40mm

Ф28 X 33mm

Ф32 X 40mm

Ф32 X 40mm

Transmission @ 1064nm

98%

98%

98%

98%

98%

98%

Wavefront distortion

λ/8

λ/8

λ/8

λ/8

λ/8

λ/8

Extinction ratio

1200:1

1500:1

1200:1

1500:1

1200:1

1500:1

λ/4 Voltage

3400V

3400V

3400V

3400V

3400V

3400V

Capacitance

10pF

10pF

10pF

10pF

10pF

10pF

 

BBO Pockels cell

 

 

 

Specifications

 

Aperture

12X12mm22X2mm2

Length

20mm, 25mm

Flatness

λ/10 @ 633nm

Wavefront

λ/8 @ 633nm

Parallelism

20 arc sec

Perpendicularity

5 arc sec

Surface quality

10/5 2/10 after coatings

Spectral range

2102100nm

Damage threshold

600MW/cm2 @ 10ns, 10Hz, 1064nm

 


 

 

Single Crystal BBO Pockels cell Specifications

 

Clear aperture diameter(mm)

1.8, 2.8, 3.6

Crystal size(WXHXL)(mm)

2 X 2 X 20

Quarter-wave voltage(@ 1064nm),(kV DC)

2.4kV

Capacitance(pF)

4

Optical transmission (%)

99

Extinction ratio

1000:1

Dimensions(mm)

20 X37.5

Clear aperture diameter(mm)

1.8

Crystal size(WXHXL)(mm)

2 X 2 X 25

Quarter-wave voltage(@ 1064nm),(kV DC)

1.9kV, ~2.9kV, ~3.9KV

Capacitance (pF)

5

Optical transmission (%)

99

Extinction ratio

1000:1

Dimensions (mm)

20 X37.5

 

Dual Crystal BBO Pockels cell Specifications

 

Clear aperture diameter(mm)

2.8,  3.6,  4.6

Crystal size(WXHXL)(mm)

3 X 3 X 20

Quarter-wave voltage(@ 1064nm),(kV DC)

1.8kV

Capacitance(pF)

8

Optical transmission (%)

98

Extinction ratio

500:1

Dimensions(mm)

25 X 60

Clear aperture diameter(mm)

2.8

Crystal size(WXHXL)(mm)

3 X 3 X 20

Quarter-wave voltage(@ 1064nm), (kV DC)

1.5kV, 2.0kV, 2.4kV

Capacitance (pF)

10

Optical transmission (%)

98

Extinction ratio

500:1

Dimensions (mm)

25 X 60

 


 

High Efficiency DKDP Pockels Cells

 

 

 

The advantage of the photoelectric electro-optic crystal Q switch

AR-Coating,Mounting Re-polishing Service

Strict Quality Control

Competitive Price

Fast Delivery

Superb Technical Support Always

 

Specifications

 

Deuteration Level

98%

Quarter-Wave Voltage

3.6KV @1064nm

Optical Damage Threshold

4GW/cm2 at 10Hz

Extinction Ratio

1000:1

Capacitance

710pf @ 1kHz

Parallelism

20 arc seconds

Perpendicularity

5 arc minutes

Angle tolerance(degree)

Δθ±0.3°ΔФ±0.3mm

Windows AR coating

R0.1% at 1064nm

Dimension tolerance

±0.1mm

Flatness

λ/8 @ 633nm

Clear aperture

90% central area


LN Pockels Cells

 

 

LiNbO3 Pockels Cells

 

 

 

 

Applications

Frequency double

Optical parametric oscillators,

Quasi-phase-matched (QPM) devices

Waveguide substrates

Q-switches and phase modulators

LiNbO3 pockels cells are very suitable for applications in Er:YAG, Ho:YAG, Tm:YAG, laser system

Higher damage threshold

 

 

 

 

 

 

Specifications

 

Aperture

Min 5 X 5mm2

Max 20 X 20mm2

Length

60mm

Orientation

12 arc min

Flatness

λ/8 @ 633nm

Wave front distortion

λ/4 @ 633nm

Parallelism

20 arc sec

Perpendicularity

5 arc sec

Surface quality

10-5 after coatings 20-10

Wavelength

300-3000nm

 

Standard specifications

 

Clear aperture

Shell size(according to customer design)

λ/4 voltage

2.5mm

Ф20 X 66mm

400V λ/2 at 633nm

Crystal size 4 X 2.5 X 60mm

Electro-optic modulation

5mm

Ф25.4 X 36mm

800V λ/2 at 633nm

Crystal size 5 X 5 X 30mm

Electro-optic modulation

8mm

Ф30/32 X 26/36mm

1800V λ/4 at 1064nm

Crystal size 9 X 9 X 20/25mm

Electric adjustable Q

9mm

Ф31/32 X 26mm

2100V λ/4 at 1064nm

Crystal size 10 X 10 X 20mm

Electric adjustable Q

Over all transmittance

98%

Crystal through distortion

λ/4 at 633nm

Insertion loss

3%

Surface quantity

λ/8 at 633nm

Output tuning Q energy

100mJ

Extinction ratio

200:1 5mm section

Capacitance

5pF

X surface chromium plated electrodes

Damage threshold

100MW/cm2 1064nm 10ns 10Hz (LN switch)

200MW/cm2 1064nm 10ns 10Hz (MgO:LN switch)

 


 

 

light-guide plate

 

 

 

Ruby

Customizable

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